Green Global
Foundation Journal
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Papers
SIMULATION AND MODELLING OF SILICON NANOWIRE FIELD EFFECT TRANSISTOR (Pages : 16 - 22)
M.D. HAQUE, M.M. ISLAM, M.M. HOSSAIN AND S. SARKERThis paper discuss on the modeling and simulation of Silicon Nano Wire field Effect Transistors (SiNW FETs). Modeling and simulation of Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) is very essential in order to understand the device physics, electrostatics and other important phenomena occurring in this device. Therefore, the modeling is done assuming both ballistic transports. The modeling of SiNW FETs assuming ballistic transport is an extension of the Natori’s theory of ballistic MOSFETs. After the derivation of the model, its benchmarking is also done. This is accomplished by comparing the simulation results of the developed model, which is implemented using MATLAB, with numerical simulation results. Various important parameters are extracted and used for comparison. The comparison shows that there is a good agreement between the simulation results of developed model and numerical results of simulation.Download