Papers

SIMULATION AND MODELLING OF SILICON NANOWIRE FIELD EFFECT TRANSISTOR (Pages : 16 - 22)

M.D. HAQUE, M.M. ISLAM, M.M. HOSSAIN AND S. SARKER

This paper discuss on the modeling and simulation of Silicon Nano Wire field Effect Transistors (SiNW FETs). Modeling and simulation of Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) is very essential in order to understand the device physics, electrostatics and other important phenomena occurring in this device. Therefore, the modeling is done assuming both ballistic transports. The modeling of SiNW FETs assuming ballistic transport is an extension of the Natori’s theory of ballistic MOSFETs. After the derivation of the model, its benchmarking is also done. This is accomplished by comparing the simulation results of the developed model, which is implemented using MATLAB, with numerical simulation results. Various important parameters are extracted and used for comparison. The comparison shows that there is a good agreement between the simulation results of developed model and numerical results of simulation.Download


Latest News

Upcoming Issue: International Journal of Sustainable Crop Production, Volume 18 Issue 2, November 2023
Upcoming Issue: Journal of Soil and Nature, Volume 10 Issue 1, November 2023
Upcoming Issue: Journal of Innovation and Development Strategy, Volume 14 Issue 1, December 2023
Upcoming Issue: International Journal of Experimental Agriculture, Volume 14 Issue 1, January 2024

Contact Us

Green Global

+880 1712 068306


Green Global

editor@ggfjournals.com rajuakhtar8@gmail.com